Peculiarities of growing Ga1-xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone

Solid solution Ga1–xInxAs is widely used in modern optoelectronics as a material for p-i-n photodetectors, lasers emitting the spectral range 1.3–1.55 μm. In this paper, features of obtaining films by method zone recrystallization with temperature gradient, essence which sequential parts source melt moving under action are studied. on GaAs substrates were obtained gradient field through thin gas specially designed graphite cassette. The prepared at 1123 K 30 K/cm. A 1:1 mixture nitrogen and hydrogen was carrier gas. thickness between substrate 1 mm. deposition time all 10 min. growth kinetics, morphology, structure chemical bonds have been Based results theoretical calculations, it found that an increase concentration indium leads to decrease film rate 0.3137 µm/min. comparison calculations experimental showed discrepancy rates more than 20 %, primarily due segregation surface. RMS roughness from 9.1 24.2 nm. It shown content significantly affects properties grown rate, elastic stresses layer, nonstoichiometric composition film. has established film, significant shift frequency LO TO phonon modes left 13 16 cm–1, respectively, observed influence mechanical stresses. presented show solid short-range order gradient.